Paper
19 November 2003 Optical characterization of ZnSe thin films
Daniel Franta, Ivan Ohlidal, Petr Klapetek, Alberto Montaigne-Ramil, Alberta Bonanni, David Stifter, Helmut Sitter
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Proceedings Volume 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life; (2003) https://doi.org/10.1117/12.530775
Event: 19th Congress of the International Commission for Optics: Optics for the Quality of Life, 2002, Florence, Italy
Abstract
In this paper the optical method based on multisample modification variable angle spectroscopic ellipsometry (VASE) is used to characterize thin films of ZnSe prepared by molecular beam epitaxy onto GaAs single crystal substrates. It is found that this method can be employed for determining the spectral dependences of the optical constants and values of the thicknesses of the films mentioned. Moreover, it is shown that using this method the RMS values of the heights and the values of the correlation length characterizing roughness irregularities of the upper boundaries of the films can be determined as well. The application of the method is illustrated by means of characterizing six samples of the ZnSe-films exhibiting different values of the thicknesses.
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Daniel Franta, Ivan Ohlidal, Petr Klapetek, Alberto Montaigne-Ramil, Alberta Bonanni, David Stifter, and Helmut Sitter "Optical characterization of ZnSe thin films", Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); https://doi.org/10.1117/12.530775
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KEYWORDS
Thin films

Gallium arsenide

Plasma physics

Crystals

Dielectrics

Laser crystals

Molecular beam epitaxy

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