19 February 2003 300 W XeCl excimer laser annealing and sequential lateral solidification in low-temperature poly silicon technology
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Proceedings Volume 4830, Third International Symposium on Laser Precision Microfabrication; (2003) https://doi.org/10.1117/12.499696
Event: LAMP 2002: International Congress on Laser Advanced Materials Processing, 2002, Osaka, Japan
Abstract
The latest development in industrial fabrication of low temperature poly silicon by high power excimer laser annealing is presented in respect of two different aspects. To begin with, the precondition for todays generation 4 LTPS TFT LCD plants was fulfilled by recently improving the line beam annealing method by introduction of a 300W Lambda Physik excimer together with up to 370mm MicroLas line beam optics, integrated in an complete Japan Steel Works excimer laser annealing system for higher throughputs in substrate recrystallization. Secondly, an outlook on a new substrate illumination method is given, the so called sequential lateral solidification (SLS), which has already been developed to a level enabling industrial exploitation. The SLS method is not only very promising, because it can decrease substrate recrystallization time by a factor of 10 in comparison to the currently used line beam method, it also improves the performance of the poly-Si film by approximately a factor of two in terms of increasing the field effect mobility of free charge carriers to up to 300cm2/Vs. This will possibly allow production of CMOS devices on the panel, which is so far not possible in case of the LineBeam method.
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Burkhard Fechner, Mark Schiwek, Hans-Jurgen Kahlert, Naoyuki Kobayashi, "300 W XeCl excimer laser annealing and sequential lateral solidification in low-temperature poly silicon technology", Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); doi: 10.1117/12.499696; https://doi.org/10.1117/12.499696
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