19 February 2003 Development of dicing technique for thin semiconductor substrates with femtosecond laser ablation
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Proceedings Volume 4830, Third International Symposium on Laser Precision Microfabrication; (2003) https://doi.org/10.1117/12.486542
Event: LAMP 2002: International Congress on Laser Advanced Materials Processing, 2002, Osaka, Japan
Abstract
Femtosecond laser has been expected as a new tool for the industrial usage in particular to material micromachining. We are developing the dicing technique with femtosecond laser ablation for the ultra thin semiconductor substrates, which are 50 μm thick or less. In this research, we performed drilling for 50 μm thick silicon substrate with femtosecond laser (π=120 fs, λ=800 nm, F=1 kHz) as the basic experiment for dicing, focusing on the influence of a double-pulse irradiation on the processing characteristics. The double-pulse irradiation for 18 shots of 10 μJ/pulse at the pulse separation time from 10 to 20 ps showed the remarkable reduction of the height of the molten layer around the drilled hole (<0.5 μm). At the same time, however, the ablation depth was the minimum (<2.3 μm). The surface inside the hole got smooth as the pulse separation time of more than 3 ps. We supposed that the second pulse in a double-pulse should generate the another ablation on the surface and its high pressure should prevent the ablated materials by the first pulse from flying out of the hole.
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Kosuke Kawahara, Kosuke Kawahara, Yasunobu Kurogi, Yasunobu Kurogi, Naoyuki Matsuo, Naoyuki Matsuo, Takafumi Ninomiya, Takafumi Ninomiya, Hiroshi Sawada, Hiroshi Sawada, Atsushi Yokotani, Atsushi Yokotani, Kou Kurosawa, Kou Kurosawa, } "Development of dicing technique for thin semiconductor substrates with femtosecond laser ablation", Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); doi: 10.1117/12.486542; https://doi.org/10.1117/12.486542
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