19 February 2003 Femtosecond laser ablation of Cr-SiO2 binary mask
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Proceedings Volume 4830, Third International Symposium on Laser Precision Microfabrication; (2003) https://doi.org/10.1117/12.486596
Event: LAMP 2002: International Congress on Laser Advanced Materials Processing, 2002, Osaka, Japan
In recent years, the microfabrication technology has splendidly been developing in the various industrial applications. It is effective that laser wavelength and pulse duration in laser microfabrication are shorter on the viewpoints of enhancement of spatial resolution and improvements of microfabrication quality. In this paper, we report on the ablation characteristics of the chromium thin film on quartz substrate (what is called Cr binary photomask) by using femtosecond laser (130fs Ti:sapphire laser). The diffraction pattern of laser intense distribution is observed in image printing with the optical rectangular slit, as the result of effects of minimized thermal diffusion with femtosecond laser pulses. We have obtained the Cr ablation without substrate damage with sufficiently wider ablation laser power range for multiple laser pulse irradiation, though ablation of the large band gap materials like quartz is easily caused due to the multi-photon absorption process in femtosecond laser irradiation. Further we indicated that ablation region does not depend on the diffraction limit with the femtosecond laser pulses.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tomohiro Okamoto, Tomohiro Okamoto, Yukio Morishige, Yukio Morishige, Etsuji Ohmura, Etsuji Ohmura, Tomokazu Sano, Tomokazu Sano, Isamu Miyamoto, Isamu Miyamoto, "Femtosecond laser ablation of Cr-SiO2 binary mask", Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); doi: 10.1117/12.486596; https://doi.org/10.1117/12.486596

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