19 February 2003 Hole drilling of glass-foam substrates with YAG laser
Author Affiliations +
Proceedings Volume 4830, Third International Symposium on Laser Precision Microfabrication; (2003) https://doi.org/10.1117/12.486558
Event: LAMP 2002: International Congress on Laser Advanced Materials Processing, 2002, Osaka, Japan
Abstract
Using a 1.06 μm wavelength YAG laser, we have produced holes in glass-foam substrates. We have used three types of glass-foam made from 1-mm-thick quartz. The first type, called S1, contains 5% foam ranging in size from 2.0-50 μm. The second type, called S2, contains foam ranging in size from 0.1-0.5 μm. The third type, called S3, contains 12% foam ranging in size from 100-200 μm. We have drilled holes in these three types of glass-foam at pulse widths of 0.5-1.2msec and power of 0.5-3.0J. Only the S1 substrate is capable of creating a through hole at a power up to 0.8J. The height of the pile-up increases 15-40 μm with increasing power. The S1 substrate has better machinability than S2 and S3. The S1 substrate is suitable for laser beam machining.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Makoto Emori, Yoshikazu Yoshida, Hiroshi Ogura, Shuhei Ueda, "Hole drilling of glass-foam substrates with YAG laser", Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); doi: 10.1117/12.486558; https://doi.org/10.1117/12.486558
PROCEEDINGS
4 PAGES


SHARE
RELATED CONTENT

A planar Schottky diode for submillimeter wavelengths
Proceedings of SPIE (December 01 1990)
LEO of III-nitride on Al2O3 and Si substrates
Proceedings of SPIE (April 13 2000)
Synthesis and characterization of InP and Ga203 nanowires
Proceedings of SPIE (January 31 2005)
Hole drilling of glass-foam substrates with laser
Proceedings of SPIE (February 25 2002)
Observation of deep holes using new technique
Proceedings of SPIE (August 04 1993)
Breakdown damages of photoconductive silicon at high fields
Proceedings of SPIE (January 04 1995)

Back to Top