19 February 2003 Optical properties of ZnxCd1-xS mixed crystal thin film produced by PLD
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Proceedings Volume 4830, Third International Symposium on Laser Precision Microfabrication; (2003) https://doi.org/10.1117/12.486578
Event: LAMP 2002: International Congress on Laser Advanced Materials Processing, 2002, Osaka, Japan
Abstract
Thin film of ZnxCd1-xS mixed crystal is applicable to short-wavelength optical devices from visible to UV region because of various band gaps. Using the pulsed laser deposition (PLD) method, we first produced the ZnxCd1-xS mixed crystal thin films. The surface morphology, the composition of x and the crystal structure of the thin films were observed with SEM, EDAX and XRD respectively. The lattice constant corresponding to (002) plane of hexagonal crystal linearly depends on x following the Vegard’s law. The crystal grains of the ZnxCd1-xS thin films have the c-axis perpendicular to the film surface and good crystallinity. The optical transmittance was measured at room temperature so that the optical band gaps of direct transition continuously increase from 2.43 eV (510 nm) to 3.63 eV (340 nm) with x. The continuous change of the band gap indicates solid solution formation.
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Hisashi Sakai, Hisashi Sakai, Mahiko Watanabe, Mahiko Watanabe, Ken Takiyama, Ken Takiyama, Bruno Ullrich, Bruno Ullrich, } "Optical properties of ZnxCd1-xS mixed crystal thin film produced by PLD", Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); doi: 10.1117/12.486578; https://doi.org/10.1117/12.486578
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