19 February 2003 Preparation of polyperinaphthlenic organic semiconductor nano-particles by excimer laser ablation and application of a few electronicdevices
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Proceedings Volume 4830, Third International Symposium on Laser Precision Microfabrication; (2003); doi: 10.1117/12.486574
Event: LAMP 2002: International Congress on Laser Advanced Materials Processing, 2002, Osaka, Japan
Abstract
Polyperinaphthalenic organic semiconductor (PPNOS) nano-particles are prepared by excimer laser ablation (ELA) of a 3, 4, 9, 10-perylenettracarboxylic dianhydride (PTCDA) target using XeCl excimer laser beams. Heterojunctions of the films consisting of nano-particles of PPNOS with Si wafers are fabricated. Well rectifier property is obtained for the junction of the PPN with a n-Si substrate. Current versus voltage curves of the heterojunction in the dark and under illumination show that the junction is promising as a photovoltaic cell. Furthermore, the films are applied to anode electrodes for ultra thin rechargeable Li ion batteries. In-situ Raman spectroscopy of the films under lithium ion doping and undoping is performed to elucidate the storage mechanism of lithium ion at cis-polyacetylene-type (phenanthrene-edge) of PPN structure.
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Satoru Nishio, Kazuyuki Tamura, Jun Murata, Hirokuni Matsukawa, Junko Kitahara, Teruhiko Kan, Akiyoshi Matsuzaki, Nobuo Ando, Yukinori Hato, "Preparation of polyperinaphthlenic organic semiconductor nano-particles by excimer laser ablation and application of a few electronicdevices", Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); doi: 10.1117/12.486574; https://doi.org/10.1117/12.486574
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KEYWORDS
Lithium

Ions

Heterojunctions

Raman spectroscopy

Laser ablation

Doping

Electrodes

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