Thermal stimulation of laser processing of Si

Naotada Okada; Ryuichi Togawa

doi:10.1117/12.486554

19 February 2003 Thermal stimulation of laser processing of Si

Naotada Okada, Ryuichi Togawa

Proceedings Volume 4830, Third International Symposium on Laser Precision Microfabrication; (2003) https://doi.org/10.1117/12.486554
Event: LAMP 2002: International Congress on Laser Advanced Materials Processing, 2002, Osaka, Japan

Abstract

Transient transmitted power through thin Si substrate (0.35 mm) irradiated with pulsed SHG-(532 nm) and fundamental (1064 nm) Nd:YAG lasers has been calculated to simulate laser marking process using FEM (finite element method). Dependence of attenuation factor on temperature and wavelength is considered. Fraction of transmitted power with a fundamental Nd:YAG laser drastically decreases by irradiation with three pulses from 40% to 5%, while the transmitted power with an SHG-Nd:YAG laser is negligible over the pulses.

Citation Download Citation

Naotada Okada and Ryuichi Togawa "Thermal stimulation of laser processing of Si", Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); https://doi.org/10.1117/12.486554

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