19 February 2003 Thermal stimulation of laser processing of Si
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Proceedings Volume 4830, Third International Symposium on Laser Precision Microfabrication; (2003) https://doi.org/10.1117/12.486554
Event: LAMP 2002: International Congress on Laser Advanced Materials Processing, 2002, Osaka, Japan
Abstract
Transient transmitted power through thin Si substrate (0.35 mm) irradiated with pulsed SHG-(532 nm) and fundamental (1064 nm) Nd:YAG lasers has been calculated to simulate laser marking process using FEM (finite element method). Dependence of attenuation factor on temperature and wavelength is considered. Fraction of transmitted power with a fundamental Nd:YAG laser drastically decreases by irradiation with three pulses from 40% to 5%, while the transmitted power with an SHG-Nd:YAG laser is negligible over the pulses.
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Naotada Okada, Naotada Okada, Ryuichi Togawa, Ryuichi Togawa, "Thermal stimulation of laser processing of Si", Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); doi: 10.1117/12.486554; https://doi.org/10.1117/12.486554
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