Electric field distribution in InGaAs/InP PIN photodetector

P Chiu; Ishiang Shih

doi:10.1117/12.474403

17 February 2003 Electric field distribution in InGaAs/InP PIN photodetector

P Chiu, Ishiang Shih

Proceedings Volume 4833, Applications of Photonic Technology 5; (2003) https://doi.org/10.1117/12.474403
Event: Applications of Photonic Technology 5, 2002, Quebec City, Canada

Abstract

In the present work, electric field distribution of an InGaAs/InP PIN mesa type photodetector is studied by employing electron beam induced current (EBIC) technique using a scanning electron microscope (SEM) with consideration of electron-hole pair generation volume. Depletion width and p⁺/n^- metallurgical junction location are determined in the experiment.

Citation Download Citation

P Chiu and Ishiang Shih "Electric field distribution in InGaAs/InP PIN photodetector", Proc. SPIE 4833, Applications of Photonic Technology 5, (17 February 2003); https://doi.org/10.1117/12.474403

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