17 February 2003 Electric field distribution in InGaAs/InP PIN photodetector
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Proceedings Volume 4833, Applications of Photonic Technology 5; (2003) https://doi.org/10.1117/12.474403
Event: Applications of Photonic Technology 5, 2002, Quebec City, Canada
Abstract
In the present work, electric field distribution of an InGaAs/InP PIN mesa type photodetector is studied by employing electron beam induced current (EBIC) technique using a scanning electron microscope (SEM) with consideration of electron-hole pair generation volume. Depletion width and p+/n- metallurgical junction location are determined in the experiment.
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P Chiu, Ishiang Shih, "Electric field distribution in InGaAs/InP PIN photodetector", Proc. SPIE 4833, Applications of Photonic Technology 5, (17 February 2003); doi: 10.1117/12.474403; https://doi.org/10.1117/12.474403
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