Paper
11 March 2003 Active pixel sensors for imaging X-ray spectrometers
Peter Holl, Peter Fischer, Robert Hartmann, Gunther Hasinger, Johannes Kollmer, Norbert Krause, Peter Lechner, Gerhard Lutz, Norbert Meidinger, Ivan Peric, Rainer H. Richter, Heike Soltau, Lothar Strueder, Johannes Treis, Joachim E. Truemper, Norbert Wermes
Author Affiliations +
Abstract
Active Pixel Sensors (APS) offer high-resolution imaging in combination with a fast and flexible readout. The MPI Halbleiterlabor develops and produces DEPFET (Depleted Field Effect Transistor) based APS devices. They are additionally characterized by enhanced sensitivity for X-ray photons in the range from 0.1 keV to 25 keV, spectroscopic energy resolution (below 1 electron r.m.s.) and radiation hardness. Moreover, the production process on high-ohmic silicon allows incorporating additional high-speed spectrometers based on silicon drift detectors. Such a detector system is proposed as a wide field imager for the XEUS (X-ray Evolving Universe Spectroscopy) mission. XEUS is a planned project within the European Space Agency's Horizon 2000+ program. We will present a focal plane concept for XEUS and measurement results from DEPFET-APS prototypes and high speed drift detectors.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Holl, Peter Fischer, Robert Hartmann, Gunther Hasinger, Johannes Kollmer, Norbert Krause, Peter Lechner, Gerhard Lutz, Norbert Meidinger, Ivan Peric, Rainer H. Richter, Heike Soltau, Lothar Strueder, Johannes Treis, Joachim E. Truemper, and Norbert Wermes "Active pixel sensors for imaging X-ray spectrometers", Proc. SPIE 4851, X-Ray and Gamma-Ray Telescopes and Instruments for Astronomy, (11 March 2003); https://doi.org/10.1117/12.461356
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Cited by 10 scholarly publications.
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KEYWORDS
Field effect transistors

Sensors

X-rays

Photons

Imaging spectroscopy

X-ray imaging

Active sensors

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