Paper
11 March 2003 High resolution CdTe detectors for the next-generation multi-Compton gamma-ray telescope
Tadayuki Takahashi, Kazuhiro Nakazawa, Tuneyoshi Kamae, Hiroyasu Tajima, Yasushi Fukazawa, Masaharu Nomachi, Motohide Kokubun
Author Affiliations +
Abstract
A multi-Compton gamma-ray telescope based on high resolution semiconductor materials (Semiconductor Multi-Compton Telescope (SMCT) or Advanced Compton Telescope (ACT)) is a promising approach to achieve high sensitivity for gamma-rays with energies from several hundred keV up to several MeV. A SMCT utilizing several tens of layers of thin CdTe (Cadmium Telluride) detector is an attractive concept to obtain higher detection efficiency in comparison with Si-based SMCT. Recently we have developed high energy-resolution CdTe diode detectors. A large-area detector with dimensions of 2.15 × 2.15 cm2 with a thickness of 0.5mm shows an energy resolution of better than 3 keV (FWHM) at 60 keV. In order to extend the application of CdTe diodes to the detection of MeV gamma-rays, we have constructed a stacked detector consisting of 40 layers of large CdTe diodes. Here we report the recent progress on the high-resolution CdTe diode and describe the conceptual design of new Multi-Compton Gamma-ray telescopes based on Monte Carlo simulation. An idea of active pair production telescope is briefly described.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadayuki Takahashi, Kazuhiro Nakazawa, Tuneyoshi Kamae, Hiroyasu Tajima, Yasushi Fukazawa, Masaharu Nomachi, and Motohide Kokubun "High resolution CdTe detectors for the next-generation multi-Compton gamma-ray telescope", Proc. SPIE 4851, X-Ray and Gamma-Ray Telescopes and Instruments for Astronomy, (11 March 2003); https://doi.org/10.1117/12.461287
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Cited by 71 scholarly publications.
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KEYWORDS
Sensors

Gamma radiation

Telescopes

Diodes

Silicon

Compton scattering

Space telescopes

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