11 July 2002 Packaged 40-Gbt/s backslot-type LiNbO3 optical modulator with a low driving voltage of 2.8 V
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Proceedings Volume 4870, Active and Passive Optical Components for WDM Communications II; (2002) https://doi.org/10.1117/12.475530
Event: ITCom 2002: The Convergence of Information Technologies and Communications, 2002, Boston, MA, United States
Abstract
We propose a newly designed X-cut lithium niobate (LiNbO3) optical modulator. It has a two-step back-slot structure to satisfy the velocity matching condition without the buffer layer of silicon dioxide (Si02). Accordingly, this modulator can achieve low drive voltage and low optical insertion loss. In addition, dc-drift phenomena due to the buffer layer can be suppressed This structure is fabricated with micro-machining technology using excimer laser ablation. The optical 3-dBe bandwidth of fabricated modulator reaches 30GHz and the drive voltage is less than 3V at 1kHz. From the measurement of optical eye diagram at 43.5-Gb/s, the RF-extinction-ratio resulted in 12dB with the drive voltage of 4.lVp-p. This modulator has the sufficient capability for 40-Gb/s optical transmission systems.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Makoto Minakata, Makoto Minakata, Jungo Kondo, Jungo Kondo, Atuo Kondo, Atuo Kondo, Kenji Aoki, Kenji Aoki, Osamu Mitomi, Osamu Mitomi, Minoru Imaeda, Minoru Imaeda, Yoshinari Kozuka, Yoshinari Kozuka, } "Packaged 40-Gbt/s backslot-type LiNbO3 optical modulator with a low driving voltage of 2.8 V", Proc. SPIE 4870, Active and Passive Optical Components for WDM Communications II, (11 July 2002); doi: 10.1117/12.475530; https://doi.org/10.1117/12.475530
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