Two-mode interference photonic switch for WDM communications

Baojun Li; Soo-Jin Chua

doi:10.1117/12.475513

11 July 2002 Two-mode interference photonic switch for WDM communications

Baojun Li, Soo-Jin Chua

Proceedings Volume 4870, Active and Passive Optical Components for WDM Communications II; (2002) https://doi.org/10.1117/12.475513
Event: ITCom 2002: The Convergence of Information Technologies and Communications, 2002, Boston, MA, United States

Abstract

A two-mode interference photonic switch with high carrier injection has been designed and fabricated based on free-carrier plasma dispersion effect. It consists of an input Y-branch single-mode ridge waveguide, a two-mode waveguide coupling section, and an output Y-branch single-mode ridge waveguide. The boron doped silicon-germanium material was grown by molecular beam epitaxy and the devices were fabricated by using standard silicon technology. The ridge waveguides were formed by reactive ion etching technique and the input and output facets of the waveguides were ground and polished by a mechanical method. The switch was characterized by using a 1310 nm InGaAsP/InP hetero-structure laser diode. Its insertion loss and On-state crosstalk were measured to be 2.74 and -15.5 dB, respectively, at a total switching current of 110 mA. The switching time is 180 ns and the fastest switching time is up to 30 ns.

Citation Download Citation

Baojun Li and Soo-Jin Chua "Two-mode interference photonic switch for WDM communications", Proc. SPIE 4870, Active and Passive Optical Components for WDM Communications II, (11 July 2002); https://doi.org/10.1117/12.475513

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