11 July 2002 Wideband and high-efficiency AlInAs/GaInAs waveguide photodetectors for 40-Gbps receivers
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Proceedings Volume 4870, Active and Passive Optical Components for WDM Communications II; (2002) https://doi.org/10.1117/12.475569
Event: ITCom 2002: The Convergence of Information Technologies and Communications, 2002, Boston, MA, United States
Abstract
Two types of waveguide photodiodes (WG-PD) - an evanescently coupled photodiode (EC-WG-PD) and a separated-absorption-and-multiplication avalanche photodiode (SAM-WG-APD) - have been developed for use in 40-Gbps receivers. The EC-PD is much more robust than a conventional WG-PD under high optical input operation because of its distributed absorbed optical power density along the light propagation in the waveguide. The EC-WG-PD simultaneously exhibited a high external responsivity of 0.96 A/W, a wide bandwidth of >40 GHz, and as high as 10-mA photocurrent operation. On the other hand, the SAM-WG-APD has a wide bandwidth of 30-35 GHz and a gain-bandwidth product of 140-180 GHz as a result of its small waveguide mesa structure and a thin multiplication layer. Record highest receiver sensitivities of -28.8 dBm at 10 Gbps and -19.6 dBm at 40 Gbps have been achieved for the first time.
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Toshitaka Torikai, Toshitaka Torikai, Takeshi Nakata, Takeshi Nakata, Takeshi Takeuchi, Takeshi Takeuchi, Kikuo Makita, Kikuo Makita, "Wideband and high-efficiency AlInAs/GaInAs waveguide photodetectors for 40-Gbps receivers", Proc. SPIE 4870, Active and Passive Optical Components for WDM Communications II, (11 July 2002); doi: 10.1117/12.475569; https://doi.org/10.1117/12.475569
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