4 December 2002 High-Speed Long-Wavelength Strained Quantum-Well Lasers: Theory and Experiment
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Proceedings Volume 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems; (2002) https://doi.org/10.1117/12.455556
Event: ITCom 2002: The Convergence of Information Technologies and Communications, 2002, Boston, MA, United States
Abstract
We investigate In1-xGaxAs1-yPy and In1-x-yGaxAlyAs quantum-well (QW) lasers for 1.55 μm telecommunication applications and compare their temperature dependence both theoretically and experimentally. Under steady-state (DC) electric bias, the gain and intrinsic absorption losses are measured based on the well-known Hakki-Paoli method from below threshold to threshold. The photon lifetime is obtained from this measurement. A comprehensive theoretical gain model with the realistic band structure including the valence band mixing and many-body effect is then used to fit the experimentally obtained modal gain spectra and extract the carrier density, and thus, the differential gain. We then carried out the high-speed microwave modulation measurement, and the experimental modulation response curves are fitted by the theory and the important parameters such as the differential gain and Κ factor are obtained. These high-speed differential gain agrees very well with the value obtained from the steady-state direct optical gain measurement. New experimental data on the temperature-dependent characteristics of two compressively strained lasers are then presented. The comparison of two material systems will be important to design high-bandwidth high-performance semiconductor lasers in order to meet requirements of 1.55 μm telecommunication applications.
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Shun-Lien Chuang, Guobin Liu, "High-Speed Long-Wavelength Strained Quantum-Well Lasers: Theory and Experiment", Proc. SPIE 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems, (4 December 2002); doi: 10.1117/12.455556; https://doi.org/10.1117/12.455556
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