4 December 2002 Semiconductor quantum-dot lasers and amplifiers
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Proceedings Volume 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems; (2002) https://doi.org/10.1117/12.457282
Event: ITCom 2002: The Convergence of Information Technologies and Communications, 2002, Boston, MA, United States
Abstract
We have produced GaAs-based quantum-dot edge-emitting lasers operating at 1.16 μm with record-low transparency current, high output power, and high internal quantum efficiencies. We have also realized GaAs-based quantum-dot lasers emitting at 1.3 μm, both high-power edge emitters and low-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth.
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Jorn M. Hvam, Paola Borri, Nikolai N. Ledentsov, Dieter Bimberg, "Semiconductor quantum-dot lasers and amplifiers", Proc. SPIE 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems, (4 December 2002); doi: 10.1117/12.457282; https://doi.org/10.1117/12.457282
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