4 December 2002 Vertical-Cavity Surface-Emitting Laser Diodes for Telecommunication Wavelengths
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Proceedings Volume 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems; (2002) https://doi.org/10.1117/12.460475
Event: ITCom 2002: The Convergence of Information Technologies and Communications, 2002, Boston, MA, United States
A new approach for InP-based long-wavelength VCSELs based on buried tunnel junctions: the buried-tunnel-junction (BTJ) VCSEL is reviewed. Excellent cw laser performance has been demonstrated for BTJ-VCSELs in the 1.55μm wavelength range, such as sub-mA threshold currents, 0.9 V threshold voltage (at λ=1.55μm), operation voltages below 1.4V, 10-70 Ω series resistance, differential efficiencies >25%, up to more than 7mW optical output power, >100°C cw operation, stable polarization and single-mode operation with SSR of the order 50 dB. Also, recent achievements on high-speed long-wavelength VCSELs are reported.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Markus-Christian Amann, Markus-Christian Amann, Markus Ortsiefer, Markus Ortsiefer, Robert Shau, Robert Shau, Juergen Rosskopf, Juergen Rosskopf, } "Vertical-Cavity Surface-Emitting Laser Diodes for Telecommunication Wavelengths", Proc. SPIE 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems, (4 December 2002); doi: 10.1117/12.460475; https://doi.org/10.1117/12.460475


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