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27 August 2003 Characterization of macro-porous silicon for electronic applications
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Abstract
Micro-Raman spectroscopy was used in this study for the analysis of the influence of process conditions on the strain and stress in macro-porous silicon (ma-PS) layers. As expected, it was found that oxidation results in significant wafer bending, depending on the layer porosity. The magnitude of stress of about 0.33 Gpa was found for ma-PS sample with lattice constant of 4 mm while for sample with the lattice constant of 12μm it was only 0.175 GPa. Dissolution of the oxide layer restores the flatness of the samples after the first oxidation. Repetition of the oxidation cycles leads to a 'memory effect', as the residual deformation increases. The results are consistent with results obtained for similar samples using X-ray diffractometry and topography and curvature measurements.
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Tatiana S. Perova, Ekaterina V. Astrova, Remy Maurice, Daria Potapova, T. N. Vasunkina, and R. A. Moore "Characterization of macro-porous silicon for electronic applications", Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003); https://doi.org/10.1117/12.467295
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