27 August 2003 Large-area Geiger-mode avalanche photodiodes for short-haul plastic optical fiber communication
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Abstract
Large-area Geiger-mode avalanche photodiodes (GMAPs) that are designed to be compatible with a 1.5μm CMOS and silicon-on-insulator (SOI) CMOS process are presented here as candidate detectors for use in optoelectronic integrated circuits (OEICs). The photodetectors have 250μm and 500μm diameter active areas with 20um virtual guard ring overlaps. The GMAPs have a breakdown voltage of -30V and will be biased below breakdown in avalanche mode. The diodes' junction capacitances at 5V reverse bias are 11.66pF and 41.71pF respectively and 4.99pF and 17.95pF respectively at 27V reverse bias. The 250μm photodiode has a calculated bandwidth of 454MHz when biased at -5V while the 500μm diode has a calculated bandwidth of 142MHz when biased at -5V calculated using small-signal equivalent circuits for the devices.
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Aoife M. Moloney, Aoife M. Moloney, Alan P. Morrison, Alan P. Morrison, J. Carlton Jackson, J. Carlton Jackson, Alan Mathewson, Alan Mathewson, Patrick J. Murphy, Patrick J. Murphy, } "Large-area Geiger-mode avalanche photodiodes for short-haul plastic optical fiber communication", Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003); doi: 10.1117/12.463925; https://doi.org/10.1117/12.463925
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