Translator Disclaimer
27 August 2003 Liquid-phase silylation characterization of Shipley SPR500A-series resists using PRIME top surface imaging process
Author Affiliations +
Abstract
Top Surface Imaging (TSI) is a well-established technique used to improve resolution for optical, ultraviolet and electron-beam lithography. The Positive Resist Image by Dry Etching (PRIME) is an advanced lithographic process incorporating electron beam exposure, near UV flood exposure, silylation and dry development. In this paper, the liquid-phase silylation process step in PRIME with Shipley SPR500A-series resists has been experimentally investigated as the most critical part of the process. FT-IR spectroscopy, UV spectroscopy, SIM spectrometry and cross-sectional SEM and TEM were used to characterise the silylation process. Electron-beam exposure with dose in the range of 25-100μC/cm2 at 30KeV was used to crosslinks the resist. Results show that an e-beam dose of 50µC/cm2 was sufficient to prevent silylation in the crosslinked areas. Two bifunctional silylating agents, the cyclic Hexamethylcyclotrisilazane (HMCTS) and the linear Bis[Dimethylamino] dimethylsilane (B[DMA]DMS), were examined and found that they silylate SPR505A much more efficiently than the previously reported Hexamethylcyclotrisiloxane (HMCTSx). The silylation contrast of the PRIME process using HMCTS silylating agent and SPR505A resist was found to be 11:1. The obtained silylated profiles of 1mm lines/spaces gratings for Shipley SPR510A resist have almost vertical sidewalls resulting in very high contrast between the silylated and unsilylated parts of the resist.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Khalil I. Arshak, Miroslav Mihov, Arousian Arshak, Declan McDonagh, David Sutton, Simon Newcomb, and Thomas J. Kinsella "Liquid-phase silylation characterization of Shipley SPR500A-series resists using PRIME top surface imaging process", Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003); https://doi.org/10.1117/12.463645
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top