Optical characterization of high-k dielectrics HfO<sub>2</sub> thin films obtained by MOCVD

Mircea Modreanu; P. K. Hurley; B. J. O'Sullivan; Breda O'Looney; Jean-Pierre Senateur; H. Rousell; F. Rousell; M. Audier; C. Dubourdieu; Ian W. Boyd; Q. Fang; T. L. Leedham; S. A. Rushworth; A. C. Jones; Hywel O. Davies; C. Jimenez

doi:10.1117/12.463984

27 August 2003 Optical characterization of high-k dielectrics HfO₂ thin films obtained by MOCVD

Mircea Modreanu, P. K. Hurley, B. J. O'Sullivan, Breda O'Looney, Jean-Pierre Senateur, H. Rousell, F. Rousell, M. Audier, C. Dubourdieu, Ian W. Boyd, Q. Fang, T. L. Leedham, S. A. Rushworth, A. C. Jones, Hywel O. Davies, C. Jimenez

Author Affiliations +

Proceedings Volume 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications; (2003) https://doi.org/10.1117/12.463984
Event: OPTO Ireland, 2002, Galway, Ireland

Abstract

The optical properties of a set of high-k dielectrics HfO₂ thin films obtained by two different modified metal organic chemical vapour deposition (MOCVD) techniques were studied using spectroscopic ellipsometry (SE). HfO₂ thin films with thickness varying from 10-40 nm were formed over a range of temperatures (300-425°C). After deposition the sample were annealed by Rapid Thermal Annealing (RTP) at 800°C in an oxygen/argon ambient and UV annealing at 400°C in oxygen. The films were analysed physically using XRD and FTIR. The XRD results show that as-deposited HfO₂ films microstructure strongly depends on deposition temperature. Both polycrystalline (T>365°C) and amorphous films (T<320oC) were formed. The polycrystalline structure is identified as monoclinic. The SE results demonstrate that as-deposited amorphous HfO₂thin films have a high degree of porosity. After annealing at 800oC in oxygen and in nitrogen ambient, due to the solid phase crystallisation, as-deposited amorphous HfO₂ thin films become crystalline and the film porosities are strongly reduced. In addition, an increase of the refractive index and a decrease of the film thickness are also obtained. Optical properties of the as-deposited polycrystalline HfO₂ are also improved after annealing and an increase of the refractive index and a decrease of the film thickness is also obtained.

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Mircea Modreanu, P. K. Hurley, B. J. O'Sullivan, Breda O'Looney, Jean-Pierre Senateur, H. Rousell, F. Rousell, M. Audier, C. Dubourdieu, Ian W. Boyd, Q. Fang, T. L. Leedham, S. A. Rushworth, A. C. Jones, Hywel O. Davies, and C. Jimenez "Optical characterization of high-k dielectrics HfO₂ thin films obtained by MOCVD", Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003); https://doi.org/10.1117/12.463984

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