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27 August 2003 Pulsed laser deposition of wide-bandgap semiconductor thin films
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Abstract
Thin films of ZnO and GaN have been deposited by pulsed laser deposition in atmospheres of oxygen and nitrgoen respectively. A time-of-flight ion probe and optical spectroscopy were used to study the interaction of the ablation plasma with the background gas. The deposition rate was measured using in situ optical reflectivity, and the thin film quality was assessed using x-ray diffraction and photoluminescence. By correlating the plasma measurements and the thin film characterization it was possible to identify the plasma regime required for the deposition of good quality films.
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Donagh O'Mahony, Eduardo de Posada, James G. Lunney, Jean-Paul Mosnier, and Enda McGlynn "Pulsed laser deposition of wide-bandgap semiconductor thin films", Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003); https://doi.org/10.1117/12.463774
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