Study of structure and quality of different silicon oxides using FTIR and Raman microscopy

Cormac Moore; Tatiana S. Perova; Barry J. Kennedy; Kevin Berwick; Igor I. Shaganov; R. Alan Moore

doi:10.1117/12.464024

27 August 2003 Study of structure and quality of different silicon oxides using FTIR and Raman microscopy

Cormac Moore, Tatiana S. Perova, Barry J. Kennedy, Kevin Berwick, Igor I. Shaganov, R. Alan Moore

Proceedings Volume 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications; (2003) https://doi.org/10.1117/12.464024
Event: OPTO Ireland, 2002, Galway, Ireland

Abstract

In this work, SiO₂ and fluorine and phosphorous doped SiO₂ thin films are investigated using FTIR and Raman techniques. FTIR spectroscopy was performed at normal and oblique incidence of the probe beam in transmission and reflection modes. The effect of polarisation and angle of incidence of the probe beam is examined for the case of reflection mode. Infrared spectra taken from doped oxides show that the structure changes with the passage of time. Alternate methods to calculate the thickness of the doped film are therefore discussed. Infrared spectra of electron beam evaporated oxides give valuable information on their structure and water content. The porosity is calculated for these samples. Finally, micro-Raman spectroscopy is used to measure the fluorine content in a device structure.

Citation Download Citation

Cormac Moore, Tatiana S. Perova, Barry J. Kennedy, Kevin Berwick, Igor I. Shaganov, and R. Alan Moore "Study of structure and quality of different silicon oxides using FTIR and Raman microscopy", Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003); https://doi.org/10.1117/12.464024

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