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27 August 2003 UV laser micromachining of silicon, indium phosphide and lithium niobate for telecommunications applications
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Abstract
The laser micromachining characteristics of indium phosphide, lithium niobate and silicon have been characterised using a 355nm neodymium vanadate laser and 193nm and 248nm excimer lasers. Etch rates for these materials are presented at the different laser wavelengths. High quality cutting of the three materials is demonstrated with the 355nm laser and an excimer laser mask projection method is subsequently used to micromachine precision V-grooves as fibre placement structures. Silicon microbenches, used for the integration of multiple-function devices, are also produced using the 355nm laser.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jako Greuters and Nadeem Hasan Rizvi "UV laser micromachining of silicon, indium phosphide and lithium niobate for telecommunications applications", Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003); https://doi.org/10.1117/12.463653
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