27 December 2002 90nm Node CD Uniformity Improvement Using a Controlled Gradient Temperature CAR PEB Process
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Abstract
Writing fogging effect in chemically amplified resist process makes critical effect on global CD distribution in the advanced 90nm node photomask with higher pattern density and smaller geometries. High contrast feature of chemically amplified resist makes difficult to correct the global CD uniformity in resist develop process compared with conventional ZEP resist. In this paper we examine the fogging effect in the combination chemically amplified resist with 50KeV writing tool and the consequential problem for production mask with higher pattern density. We will present the feasibility of the global CD uniformity correction technique in post exposure baking process using gradient temperature hotplate.
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Dong-Il Park, Soon-Kyu Seo, Eu-Sang Park, Jong-Hwa Lee, Woo-Gun Jeong, Jin-Min Kim, Sang-Soo Choi, Soo-Hong Jeong, "90nm Node CD Uniformity Improvement Using a Controlled Gradient Temperature CAR PEB Process", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467905; https://doi.org/10.1117/12.467905
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