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27 December 2002 Advanced 193 tri-tone EAPSM (9%-18%) for 65 nm node
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Abstract
Semiconductor manufacturers are increasingly focusing on contact and via layers as the most difficult lithography pattern. Focus and exposure latitude, MEF, as well as iso-dense bias are challenges for contact patterning. This situation is only expected to worsen for the 65nm device generation where the 2001 SIA roadmap update lists the contact size as 90-100nm in 2004-2005. Thus, new contact pattern techniques with novel manufacturability are required. One possible avenue to meet these stringent process control requirements is the use of tri-tone high transmission attenuated phase shifting masks (tri-tone AttPSM) for the 65nm generation. Multilayered SiN/TiN (9%-18%) EAPSM materials to manufacture advanced reticles were used in this investigation. Extensive study during the photomask processing (Front End and Back End) to access any issues related to the making of High %T tri-tone product types was performed. Finally, the 2 prototype reticles were evaluated on a 193nm scanner (0.75NA) with various illumination settings to generate imaging to support the 65nm node technology generation.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laurent Dieu, Eric L. Fanucchi, Greg P. Hughes, John G. Maltabes, David L. Mellenthin, Will Conley, Lloyd C. Litt, Kevin Lucas, Robert John Socha, Kurt E. Wampler, Arjan Verhappen, and Jan-Pieter Kiujten "Advanced 193 tri-tone EAPSM (9%-18%) for 65 nm node", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467783
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