It has long been understood that there is an image fidelity difference between the integrated circuit design pattern and the photomask made from that pattern, largely due to the finite spot size of pattern generators. Furthermore, there are known differences in photomask image fidelity (rounding, jogs, etc.) between e-beam and laser pattern generators. Using a novel technique developed by DuPont Photomasks, Inc. (DPI), actual photomask fidelity has been simulated from design data to produce a more true-to-life representation of the mask. We have performed analytical simulations and printed-wafer measurements on Cypress 100-nm technology designs to determine the differences and effects on optical proximity correction (OPC) of two types of pattern generators: 50 keV e-beam and DUV laser. Both JEOL 9000MV-II+ and ETEC ALTA 4000 images were simulated and saved in GDSII format (“mask-GDSII”). These new mask images were processed through standard lithography simulation software to predict the effects each mask writer has on localized optical proximity effects. Simulations were compared to printed wafer results. A detailed comparison of the accuracy of the mask-GDSII and original design GDSII is performed. Furthermore, comparison of 50 keV e-beam and DUV laser image fidelity is completed, and recommendations are made on how to correct OPC models for each type of photomask generator. Lastly, conclusions are drawn about the use of DUV laser and 50 keV e-beam photomasks.