27 December 2002 Aerial Image Measurement System for 157 nm Lithography
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Abstract
The worldwide first Aerial Image Measurement System (AIMS) for 157 nm lithography has been used to measure binary chrome and attenuated phase shift masks at 157 nm wavelength. The AIMS measurements were done for line structures from 200 nm up to 400 nm and for 500 nm contacts. Through focus series have been conducted to calculate the process windows for various structures and feature sizes.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Klaus Eisner, Klaus Eisner, Peter Kuschnerus, Peter Kuschnerus, Jan-Peter Urbach, Jan-Peter Urbach, Christof M. Schilz, Christof M. Schilz, Thomas Engel, Thomas Engel, Axel M. Zibold, Axel M. Zibold, Takashi Yasui, Takashi Yasui, Iwao Higashikawa, Iwao Higashikawa, } "Aerial Image Measurement System for 157 nm Lithography", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467353; https://doi.org/10.1117/12.467353
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