27 December 2002 Alt-PSM of Contact with Phase Assist Feature for 65-nm Node
Author Affiliations +
Abstract
Resolving the very small feature size of contact holes for 65-nm technology node has placed enormous challenge on even the up-to-date optical lithography techniques. Resolution enhancement technique (RET) will be helpful and necessary to alleviate the strain posed by such a task. Here we report that a 193-nm alternating phase shift mask (Alt-PSM) with phase-shifted assist features is used to print the contact holes for 65-nm node. With a novel algorithm of phase assignment, the phases of the main features are assigned properly in the full chip with the assistant features added. The results show that DOF of 110-nm iso-contact hole can be enhanced up to 0.5 μm.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan-Wen You, Jan-Wen You, Jaw-Jung Shin, Jaw-Jung Shin, Chung-Hsing Chang, Chung-Hsing Chang, Li-Wei Kung, Li-Wei Kung, Bin-Chang Chang, Bin-Chang Chang, Chang-Min Dai, Chang-Min Dai, Tsai-Sheng Gau, Tsai-Sheng Gau, Burn Jeng Lin, Burn Jeng Lin, } "Alt-PSM of Contact with Phase Assist Feature for 65-nm Node", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467499; https://doi.org/10.1117/12.467499
PROCEEDINGS
10 PAGES


SHARE
Back to Top