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27 December 2002 Application of Cr-less mask technology for sub-100nm gate with single exposure
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Abstract
Chrome Less phase lithography (CPL) may be the crucial technology to print 100nm node and below. CPL can apply to various design layers without causing phase conflicts, while phase edge phase shift mask (PEPSM) is beneficial for specific pattern configurations and pitches. Therefore, we tested the feasibility of CPL including phase grating and hybrid CPL. And we tested the two types of CPL such as mesa and trench structures to decide the proper shifter forming method. We evaluated pattern fidelity of CPL using simulation, aerial image measurement system (AIMS) and wafer printing. Finally, we will compare the optical performance between CPL and PEPSM for 100nm node SRAM gate.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sung-Hyuck Kim, Dong-Hoon Chung, Ji-Soong Park, In-Kyun Shin, Seong-woon Choi, Jung-Min Sohn, Jae-Han Lee, Hye-Soo Shin, J. Fung Chen, and Douglas Van Den Broeke "Application of Cr-less mask technology for sub-100nm gate with single exposure", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.468097
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