27 December 2002 Characterization of repairs to KrF 300mm wafer printability for 0.13μm design rule with attenuated phase-shifting mask
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Abstract
For sub-0.13um lithography, attenuated phase shifting mask (AttPSM) with optical proximity correction (OPC) is reported as one of the potential methods to achieve manufacturable process by using 248nm exposure wavelength. Unfortunately, the low-k1 imaging process in 130nm lithography imposes much more stringent requirements on defect repair, especially on AttPSM reticle. Therefore, the imperfect repairs will have a significant impact on wafer process window due to quartz damage and phase distortion caused by Ga+ ion stain removal and added carbon material, respectively. In this paper, we have prepared AttPSM test masks having programmed defects with various opaque defects. Each defect area was inspected with KLA-Tencor's SLF27 inspection system to acquire defect coordinates and image, simulated with AIMS to assess the intensity and transmission loss induced by repair process. All of masks were made by DuPont Photomasks Taiwan (DPT) by using the Jbx9000MV2 E-beam writer and dry Chrome etch process. All lithographic experiments were performed on 300mm wafer using high NA ASML AT750S scanner and high contrast CAR resist. In this study, we have focused on the impact of quartz damage and phase error on wafer process window by comparing the wafer CD and pattern profile through focus. In order to establish a efficient way to perform effective judgement on repair defect between mask shop and wafer fab, both AIMS and wafer results will be compared and correlated.
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William Chou, William Chou, Tsung Chen, Tsung Chen, Will Tseng, Will Tseng, Peter Huang, Peter Huang, Chin Chih Tseng, Chin Chih Tseng, Mars Chung, Mars Chung, Dick Wang, Dick Wang, Norman Huang, Norman Huang, } "Characterization of repairs to KrF 300mm wafer printability for 0.13μm design rule with attenuated phase-shifting mask", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467314; https://doi.org/10.1117/12.467314
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