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27 December 2002 Comparison of DUV Wafer and Reticle Lithography: What is the Resolution Limit?
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Abstract
Laser pattern generators have demonstrated cost-effective reticle manufacturing for critical layers down to the 180nm generation. This paper considers the issues that will need to be resolved to allow laser pattern generators to pattern critical levels for 130nm and 90nm node technology. The performance of current Wafer Optical lithography systems is used as a benchmark. The differences between Wafer and Reticle lithography, in particular, image formation, resist processing, substrate design and etch requirements are all discussed. Areas where wafer lithography expertise can benefit mask makers are discussed and approaches to extend Laser pattern generators down to 200nm feature sizes and below are suggested.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris A. Spence, Cyrus Emil Tabery, Gerald Cantrell, Leslie B. Dahl, Peter D. Buck, and William L. Wilkinson "Comparison of DUV Wafer and Reticle Lithography: What is the Resolution Limit?", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.468094
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