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27 December 2002 Cr and TaN Absorber Mask Etch CD Performance Study For Extreme Ultraviolet Lithography
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Abstract
Extreme Ultraviolet Lithography (EUVL) is the leading candidate for the 45 nm node technology and beyond. A mask film structure and material selection become increasingly important for a success in the EUVL mask process development. Etch CD performance is considered in the material selection of an EUV mask absorber stack. This paper reports the study of etch CD performance and pattern loading effects in the plasma etch on two potential absorber materials of Cr and TaN. The etch process was experimentally setup on wafer samples and two different film etches were conducted in the same etch chamber. The CD data was collected on an SEM and was used for the CD performance analysis and comparison. In this study, it was found that the process etch CD bias in the TaN etch was significantly smaller than that in the Cr etch due to a fast etch rate of the TaN etch. The variation of the etch CD bias in the TaN etch was slightly higher than that in the Cr etch. The global pattern density changes had less impact to the Cr etch bias than the TaN etch bias.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guojing Zhang and Pei-yang Yan "Cr and TaN Absorber Mask Etch CD Performance Study For Extreme Ultraviolet Lithography", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468213; https://doi.org/10.1117/12.468213
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