27 December 2002 Electrical Dimension Characterization of Binary and Alternating Aperture Phase-Shifting Masks
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Abstract
This paper presents the use of specially designed electrically testable structures to measure and characterise linewidths on both binary and alternating aperture phase-shifting masks (altPSM). The technique behind the use of these modified cross-bridge structures is explained together with the specific designs used to characterise both dense and isolated features. The practicality of measuring masks with and without anti-reflective chromium dioxide are discussed and the the difference in the repeatability of the measurements is presented. CD SEM measurements of these features are compared with those obtained electrically and an excellent correlation between the electrical dimension (ECD) and the dimension measured both on mask and wafer by SEM is shown.
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Martin McCallum, Martin McCallum, Stewart Smith, Stewart Smith, Alan Lissimore, Alan Lissimore, Anthony J. Walton, Anthony J. Walton, J. Tom M. Stevenson, J. Tom M. Stevenson, } "Electrical Dimension Characterization of Binary and Alternating Aperture Phase-Shifting Masks", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467430; https://doi.org/10.1117/12.467430
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