27 December 2002 Enhancement of KRS-XE for 50 keV Advanced Mask Making Applications
Author Affiliations +
KRS-XE, a high performance chemically amplified photoresist designed specifically for e-beam mask making applications, has been enhanced to achieve reduced “footing” on chrome oxide surfaces while still maintaining the original lithographic characteristics that make KRS-XE a promising mask making candidate. These attributes include high resolution, superior bake latitudes, high vacuum stability, coated shelf life of greater than 2 months, and, most notably, the absence of a post exposure bake. In conjunction with the footing reduction the requisite sensitivity requirement of <10uC/cm2 with 50 keV exposure tools has been achieved while retaining the robust process latitude previously reported for this resist. Through a careful study of the photoresist formulation components a route to the ultra-high sensitivity of <2.5uC/cm2 at 50 keV has been elucidated which will further enhance throughput, decrease heating effects, and potentially be a suitable resist for e-beam projection lithography (EPL).
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karen E. Petrillo, Karen E. Petrillo, David R. Medeiros, David R. Medeiros, Jim Bucchignano, Jim Bucchignano, Marie Angelopoulos, Marie Angelopoulos, Dario L. Goldfarb, Dario L. Goldfarb, Wu-Song Huang, Wu-Song Huang, Wayne M. Moreau, Wayne M. Moreau, Robert Lang, Robert Lang, Chester Huang, Chester Huang, Christina Deverich, Christina Deverich, Thomas J. Cardinali, Thomas J. Cardinali, } "Enhancement of KRS-XE for 50 keV Advanced Mask Making Applications", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468085; https://doi.org/10.1117/12.468085

Back to Top