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27 December 2002 Imaging 100 nm contacts with high transmission attenuated phase shift masks
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Abstract
This study explores the capability of printing 100 nm contacts through the use of 9% and 15% attenuated phase shift masks and a 0.75 NA 193 nm scanner. The mask designs targeted simultaneous solutions for 100 nm contacts at pitches from 200 nm to 300 nm. The two masks were successfully manufactured from experimental MoSiON embedded-attenuated phase shift mask (EAPSM) blanks. The 100 nm contacts were successfully printed with a depth of focus (DOF) from 0.1-0.7 μm. Overlapping process windows were not achieved but were possible upon adjustment of the mask biases. The observed mask error enhancement factor (MEEF) was approximately 3 for the 220 nm pitch. Side lobe printing was not observed for either mask.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James V. Beach, John S. Petersen, Benjamin George Eynon Jr., Darren Taylor, Dave J. Gerold, and Mark J. Maslow "Imaging 100 nm contacts with high transmission attenuated phase shift masks", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467763
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