Improving feature-size linearity for alternating phase-shift mask applications utilizing a next-generation ICP source

Jong Shin; Chris Constantine; Jason Plumhoff; Emmanuel Rausa

doi:10.1117/12.467580

27 December 2002 Improving Feature Size Linearity for Alternating Phase Shift Mask Applications Utilizing a Next Generation ICP Source

Jong Shin, Chris Constantine, Jason Plumhoff, Emmanuel Rausa

Author Affiliations +

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.467580
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

Alternating Aperture Phase Shift Photomask (AAPSM) technology becomes more critical as the industry approaches 90nm design rules. AAPSM enables the lithographic process to extend the viability of deep ultraviolet (DUV) photolithography systems. However, manufacturing high quality AAPS masks is difficult due to the stringent requirements placed on the etch process. Dry etch processes for alternating aperture masks must have good intra-mask phase uniformity, high Quartz/Cr selectivity, and vertical side-wall profile. While maintaining these parameters, it is also necessary for the process to achieve etch depth linearity across a range of feature sizes. Using a next generation Inductively Coupled Plasma (ICP), a series of experiments were performed to optimize the quartz etch process to improve feature size etch depth linearity and selectivity to resist. Etch results from an optimized solution are presented.

Citation Download Citation

Jong Shin, Chris Constantine, Jason Plumhoff, and Emmanuel Rausa "Improving Feature Size Linearity for Alternating Phase Shift Mask Applications Utilizing a Next Generation ICP Source", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467580

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