27 December 2002 Inspecting Alternating Phase Shift Masks by Matching Stepper Conditions
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The paper presents a new technology to inspect alternating phase shifting masks. Instead of finding defects based on a size-dependent defect specification, defects are found according to their impact at the wafer CD result. The inspection methodology used is aerial imaging. Phase effects are taking into account inherently. The main advantage of this method is that only defects, which actually affect the wafer result, will be detected and classified. The paper presents first inspection results on alternating phase shifting test masks designed for the 70nm generation.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anja Rosenbusch, Anja Rosenbusch, Shirley Hemar, Shirley Hemar, Boaz Kenan, Boaz Kenan, "Inspecting Alternating Phase Shift Masks by Matching Stepper Conditions", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467781; https://doi.org/10.1117/12.467781

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