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27 December 2002 Integration of Anti-reflection Coatings on EUV Absorber Stacks
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Extreme ultraviolet lithography (EUVL) is the leading candidate for next generation lithography with the potential for extendibility beyond the 50-nm node. The inspection contrast of DUV and 193nm optical reticles is essentially 100%; however, EUVL reticles are reflective in nature and do not allow for transmissive inspection. The Mo/Si multilayer (ML) mirror has a reflectivity of 55-60% with 257nm illumination. The reflectivity of the multilayer at the inspection wavelength dictates that the patterned areas of the mask must be dark to achieve high inspection contrast (i.e., 0% reflectivity at the inspection wavelength). Furthermore, the reticle should retain the same tone during the pre-repair stage and the final reticle stage to allow reuse of inspection algorithms and easier defect repair verification. The use of an anti-reflection coating (ARC) on a TaN absorber has been shown . This article will describe additional options for a wide range of anti-reflection coatings and their impact on the design and fabrication of the EUV absorber stack. Both experimental and modeling results will be presented for different absorber stack configurations.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James R. Wasson, Sang-In Han, N. V. Edwards, Eric Weisbrod, William J. Dauksher, Pawitter J. S. Mangat, and Donald W. Pettibone "Integration of Anti-reflection Coatings on EUV Absorber Stacks", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002);


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