27 December 2002 Mask patterning using chemically amplified resists and the novel STEAG HamaTech Blank Coater ASR5000
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Abstract
The new capillary spin (CAP-Spin) coating principle, realized in the STEAG HamaTech ASR5000, was evaluated for mask making using chemically amplified resists. Basic correlations between coating parameters, resist thickness and film uniformity were figured out. We achieved a film thickness uniformity of close to 2% total range after a process optimization based on our investigation results with the positive tone resist JSR KRS-XE. Finally, the performance of ASR coated blanks was assessed on the basis of a binary mask making process using the Fuji FEP171 resist. The ASR5000 was integrated in an advanced tool set and the patterned reticles have met the requirements of the 100nm Technology Node in terms of resolution and CD-uniformity. No correlation between thickness and CD distribution could be observed. The evaluated post coating and post exposure delay influence of FEP171 also confirms the usability of the ASR5000 coated substrates for advanced mask making.
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Corinna Koepernik, Dirk Beyer, Peter Dress, Thomas Hoffmann, Peter Hudek, Mathias Irmscher, Christian Krauss, Bernd Leibold, Dietmar Mueller, Christian Reuter, Reinhard Springer, Jakob Szekeresch, Peter Voehringer, "Mask patterning using chemically amplified resists and the novel STEAG HamaTech Blank Coater ASR5000", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467424; https://doi.org/10.1117/12.467424
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