27 December 2002 Mask patterning using chemically amplified resists and the novel STEAG HamaTech Blank Coater ASR5000
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The new capillary spin (CAP-Spin) coating principle, realized in the STEAG HamaTech ASR5000, was evaluated for mask making using chemically amplified resists. Basic correlations between coating parameters, resist thickness and film uniformity were figured out. We achieved a film thickness uniformity of close to 2% total range after a process optimization based on our investigation results with the positive tone resist JSR KRS-XE. Finally, the performance of ASR coated blanks was assessed on the basis of a binary mask making process using the Fuji FEP171 resist. The ASR5000 was integrated in an advanced tool set and the patterned reticles have met the requirements of the 100nm Technology Node in terms of resolution and CD-uniformity. No correlation between thickness and CD distribution could be observed. The evaluated post coating and post exposure delay influence of FEP171 also confirms the usability of the ASR5000 coated substrates for advanced mask making.
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Corinna Koepernik, Corinna Koepernik, Dirk Beyer, Dirk Beyer, Peter Dress, Peter Dress, Thomas Hoffmann, Thomas Hoffmann, Peter Hudek, Peter Hudek, Mathias Irmscher, Mathias Irmscher, Christian Krauss, Christian Krauss, Bernd Leibold, Bernd Leibold, Dietmar Mueller, Dietmar Mueller, Christian Reuter, Christian Reuter, Reinhard Springer, Reinhard Springer, Jakob Szekeresch, Jakob Szekeresch, Peter Voehringer, Peter Voehringer, } "Mask patterning using chemically amplified resists and the novel STEAG HamaTech Blank Coater ASR5000", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467424; https://doi.org/10.1117/12.467424

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