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27 December 2002 Mesa or Trench Type for Chromeless Phase-shift Lithography From Photolithographic Performance Point of View
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Abstract
Chromeless phase Lithography (CPL) has been shown to be one of the promising low k1 technologies having the potential to extend optical lithography to nodes well beyond 100nm. A CPL mask can be either the mesa type phase shift mask for which the feature regions are protected during quartz etching, or the trench type phase shift mask for which the feature regions are etched away during quartz etching. It is conceivable that the photolithography performance could be different from these two different types of phase shift masks. In our rigorous electromagnetic field (EMF) simulations, we have observed that the light propagation behavior through the 3D mask features is very different for the two mask types, which causes the aerial image difference subsequently. The through pitch performance from rigorous EMF simulations shows that trench type CPL mask is a slightly better choice from the photolithographic performance point of view, under the illumination condition investigated here. It should be understood, however, that such a conclusion may not be generalized to other illumination conditions without further investigations. The observed zero MEEF zones in CPL technology impose great challenges to model OPC implementation that depends on aerial image characteristics, it can, however, be overcome by using other implementations.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xuelong Shi, J. Fung Chen, Stephen Hsu, Michael Hsu, Douglas J. Van Den Broeke, Robert John Socha, Chun Hong Chang, and Chang Min Dai "Mesa or Trench Type for Chromeless Phase-shift Lithography From Photolithographic Performance Point of View", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467393
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