27 December 2002 Optimizing etch uniformity for alternating aperture phase shift masks on Etec Systems' Tetra photomask etch system
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Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002); doi: 10.1117/12.468202
Event: Photomask Technology 2002, 2002, Monterey, CA, United States
Abstract
A simple method for minimizing the glass etch non-uniformity in the Etec Systems' Tetra etch tool will be presented along with etch rate performance stability results. In this triple etch process, the final phase uniformity was improved from ± 5 ° to ± 1.3 ° phase shift at 248 nm without changing either processing chemistry or any other process parameters. The procedure used to obtain this improved uniformity as well as maps illustrating the depth distribution over the plate after each step will be given.
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Nabila Lehachi Waheed, Cynthia J. Brooks, "Optimizing etch uniformity for alternating aperture phase shift masks on Etec Systems' Tetra photomask etch system", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468202; https://doi.org/10.1117/12.468202
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KEYWORDS
Etching

Glasses

Phase shifts

Photomasks

Chemistry

Lithography

Photoresist materials

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