27 December 2002 Study on PSM defect printability of extremely low-k1 sub-130 nm KrF lithography
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Abstract
As the design rule of semiconductor devices shrinks dramatically, the reticle defect detectability and its specification need to be more tighten than before. Moreover, the fact that most of critical layer from DRAM mass productions are processed with using PSM gives us high defect printability, which burdens the reticle inspection processes. To analyze the specification of PSM defect, the programmed defect test plate was designed and fabricated. The programmed defect test reticle contains some critical DRAM patterns with different design rules (150 nm to 110 nm node) for the low k1 KrF lithography. Various kinds of defect were programmed in the test reticle. After inspection of this test plate and wafer exposure, the results of detectability and those of printability were compared and the defect printability dependency on design rule and wafer illumination conditions was analyzed. Finally the PSM defect specification is derived from these results for sub 130 nm KrF lithography.
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Won-Il Cho, Won-Il Cho, Gisung Yeo, Gisung Yeo, Seong-Yong Moon, Seong-Yong Moon, Hee-Sun Yoon, Hee-Sun Yoon, Jung-Min Sohn, Jung-Min Sohn, } "Study on PSM defect printability of extremely low-k1 sub-130 nm KrF lithography", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468095; https://doi.org/10.1117/12.468095
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