27 December 2002 Partitioning of Photomask Processes for Defects: II.
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Reticle defects are one leading source of yield loss. This paper is a continuation of work begun to track defect sources to the process steps that generate them. Prior work was done on a common electron beam resist. This study will examine a DUV optical chemically amplified resist.
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Charles H. Howard, Charles H. Howard, Matthew J. Lamantia, Matthew J. Lamantia, } "Partitioning of Photomask Processes for Defects: II.", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467855; https://doi.org/10.1117/12.467855

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