Performance of repaired defects and attPSM in EUV multilayer masks

Yunfei Deng; Bruno La Fontaine; Andrew R. Neureuther

doi:10.1117/12.467896

27 December 2002 Performance of repaired defects and attPSM in EUV multilayer masks

Yunfei Deng, Bruno La Fontaine, Andrew R. Neureuther

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.467896
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

The imaging performance of non-planar topographies in EUV masks for both partially repaired defects and non-planar attenuating phase-shifting masks made with repair treatments are evaluated using rigorous electromagnetic simulation with TEMPEST. Typical topographies produced by treatment techniques in the literature such as removal of top layers and compaction produced by electron-beam heating are considered. Isolated defects on/near the surface repaired by material removal are shown to result in an image intensity within 5% of the clear field value. Deeply buried defects within the multilayer treated by electron-beam heating can be repaired to 3% of the clear field but over repair can result in some degradation. Compaction from a 6.938 nm period to a 6.312 nm period shows a 540° phase-shift and an intensity reduced to about 6% suggesting such a treatment may be used to create attenuated phase-shifting masks for EUV. The quality of the aerial image for such a mask is studied as a function of the lateral transition distance between treated and untreated regions.

Citation Download Citation

Yunfei Deng, Bruno La Fontaine, and Andrew R. Neureuther "Performance of repaired defects and attPSM in EUV multilayer masks", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467896

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