27 December 2002 Precise and accurate characterization of DUV and V-UV phase shifting mask materials by combined V-UV spectroscopic ellipsometry and x-ray reflectometry
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Abstract
Precise characterization of the thin films for phase-shift masks is important to guarantee the optical properties of the phase shifters. This can be accomplished by using a novel instrument that combines Grazing angle C-ray Reflectometry and V-UV Spectroscopic Ellipsometry. For example, CrONx and MoSiNx thin films can be precisely characterized for layer thickness and optical constants, and for spectral reflectance/transmittance at any photolithography wavelength of interest..
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Pierre Boher, Pierre Boher, Adrien Darragon, Adrien Darragon, Christophe Defranoux, Christophe Defranoux, Jean-Claude Fouere, Jean-Claude Fouere, Jean-Louis P. Stehle, Jean-Louis P. Stehle, } "Precise and accurate characterization of DUV and V-UV phase shifting mask materials by combined V-UV spectroscopic ellipsometry and x-ray reflectometry", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.474127; https://doi.org/10.1117/12.474127
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