Translator Disclaimer
27 December 2002 Recovery of Mo/Si multilayers coated LTEM substrate
Author Affiliations +
Extreme ultraviolet lithography (EUVL) is a leading next generation lithography technology. The mask blank for EUVL consists of a low thermal expansion material substrate having a square photomask form factor that is coated with Mo/Si multilayers. One of the challenges in implementing EUVL is to economically fabricate multilayer-coated mask blanks with no printable defects. The starting substrates, due to the required tight specifications of flatness and defects, might have a very high manufacturing cost and hence a method to recover these substrates for reuse without compromising the properties will enable a lower cost for the masks. This paper details a potential approach to remove the damaged multilayers from the substrates without compromising the morphology and characteristics of the starting substrate. Furthermore, the process is applicable to optical elements of the EUV projection optics system that have reflective Mo/Si mirrors of various shapes.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pawitter J. S. Mangat, A. Alec Talin, Andrew F. Hooper, Diana Convey, Sang-In Han, and James R. Wasson "Recovery of Mo/Si multilayers coated LTEM substrate", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002);


Vote taking for EUV lithography a radical approach to...
Proceedings of SPIE (March 24 2017)
Damage resistant and low-stress Si-based multilayer mirrors
Proceedings of SPIE (December 20 2001)
Exposure contrast of an EUV mask
Proceedings of SPIE (August 28 2003)
EUV mask fabrication with Cr absorber
Proceedings of SPIE (July 21 2000)

Back to Top